aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 1 m du5692s - dual n - channel trench mosfet 30v absolute maximum ratings (ta = 25 o c) characteristics symbol fet1 fet2 unit drain - source voltage v dss 30 v gate - source voltage v gss 20 12 v continuous drain current (1) t c =25 o c (silicon limited) i d 70 160 a t c =25 o c (package limited) 52 100 t c = 70 o c 57 129 t a =25 o c 15.3 27.9 t a = 70 o c 12.4 22.4 pulsed drain current i dm 2 08 400 a power dissipation t c =25 o c p d 46.3 83.3 w t a =25 o c 2.2 2.5 single pulse avalanche energy (2) e as 43 100 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol fet1 fet2 unit typ. max typ. max thermal resistance, junction - to - ambient (1) r ja 47.5 57 41.7 50 o c/w thermal resistance, junction - to - case r jc 2.2 2.7 1.1 1.5 m du5692s dual asymmetric n - channel trench mosfet 30 v general description the md u5692s uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . md u5692s is suitable for dc/dc converter and general purpose applications. features fet1 fet2 ? v ds = 30v v ds = 30v ? i d = 52 a i d = 100 a @v gs = 10v ? r ds(on) < 5.4 m < 2.0 m @v gs = 10v < 8.5 m < 2.5 m @v gs = 4.5v ? 100% uil tested ? 100% rg tested 5 6 7 8 4 3 2 1 g 1 d 1 d 1 d 1 g2 s2 s2 s2 1 s1/d2 2 3 4
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 2 m du5692s - dual n - channel trench mosfet 30v ordering information p art number temp. range package packing ro hs status md u5692 sv rh - 55~150 o c d u al pdfn56 tape & reel h alogen free fet1 electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 1 .0 1.8 3 .0 drain cut - off current i dss v ds = 30 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0 .1 drain - source on resistance r ds(on) v gs = 10v, i d = 20 a - 4. 4 5.4 m t j = 1 25 o c - 6.8 8.3 v gs = 4.5v, i d = 20 a - 6.7 8.5 forward transconductance g fs v ds = 5v, i d = 20 a - 91 - s dynamic characteristics total gate charge q g(10v) v ds = 1 5.0 v, i d = 2 0 a, v gs = 10v 14 20 27 nc total gate charge q g(4.5v) 6.2 9 12 gate - source charge q gs - 6 - gate - drain charge q gd - 1.9 - input capacitance c iss v ds = 1 5.0 v, v gs = 0v, f = 1.0mhz 1040 1500 1950 pf output capacitance c oss 418 6 10 790 reverse transfer capacitance c rs s 28 42 55 turn - on delay time t d(on) v gs = 10v , v d s =15v, i d = 2 0 a, r g = 3 .0 - 10.5 - ns rise time t r - 1 1.3 - tu r n - off delay time t d(off) - 28.5 - fall time t f - 5.1 - gate resistance rg f=1 mhz 0.5 1.0 2.0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 1a, v gs = 0v - 0.7 1.0 v body diode reverse recovery time t rr i f = 2 0 a, dl/dt = 2 0 0a/s - 30.5 - ns body diode reverse recovery charge q rr - 42.9 - nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) . continuous current at t c = 25 is silicon limited. 2. e as is tested at starting t j = 25 , l = 0.1 mh, i as = 20 a , v dd = 27v, v gs = 10v . .
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 3 m du5692s - dual n - channel trench mosfet 30v fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature temperature area fig.4 on - resistance variation with gate to source voltage fig.5 transfer characteristics fig.6 body diode forward voltage variation with source current and temperature 0 2 4 6 8 0 5 10 15 20 25 30 v gs , gate-source voltage [v] notes : v ds = 5v i d , drain current [a] 0 10 20 30 40 50 0 2 4 6 8 10 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 3.0v 4.0v 6.0v v gs = 10v 8.0v 4.5v 2.5v i d , drain current [a] v ds , drain-source voltage [v] 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 notes : i d = 20a r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 -1 10 0 10 1 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 4 m du5692s - dual n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current vs. cas e temperature fig.11 transient thermal response curve 0 5 10 15 20 25 30 0 500 1000 1500 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [f] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 20 40 60 80 limited by package i d , drain current [a] t c , case temperature [ ] 0 5 10 15 20 0 2 4 6 8 10 note : i d = 20a v ds = 15v v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 ms 10 ms 10s 1s 100 ms dc operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec]
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 5 m du5692s - dual n - channel trench mosfet 30v fet2 electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 10m a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1. 1 1. 4 2. 2 drain cut - off current i dss v ds = 30 v, v gs = 0v - - 500 a gate leakage current i gss v gs = 12 v, v ds = 0v - - 0 .1 drain - source on resistance r ds(on) v gs = 10v, i d = 2 0 a - 1. 5 2. 0 m t j = 1 25 o c - 1.9 2.7 v gs = 4.5v, i d = 20 a - 1.9 2.5 forward transconductance g fs v ds = 5 v, i d = 2 0 a - 1 00 - s dynamic characteristics total gate charge q g(10v) v ds = 15.0v, i d = 2 0 a, v gs = 10v 49 70 92 nc total gate charge q g(4.5v) 20 29 39 gate - source charge q gs - 10.8 - gate - drain charge q gd - 6.6 - input capacitance c iss v ds = 15.0v, v gs = 0v, f = 1.0mhz 3573 5140 6679 pf output capacitance c oss 820 1 200 1560 reverse transfer capacitance c rss 64 9 4 122 turn - on delay time t d(on) v gs = 1 0v , v dd =15v, i d = 2 0 a, r g = 3 - 1 5.7 - ns rise time t r - 1 2.7 - tu r n - off delay time t d(off) - 7 7 - fall time t f - 9.6 - gate resistance rg f=1 mhz 0.5 1.0 2.0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 1.0a, v gs = 0v - 0.4 1.0 v body diode reverse recovery time t rr i f = 2 0 a, dl/dt = 20 0a/s - 4 2 - ns body diode reverse recovery charge q rr - 70 - nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) . continuous current at t c =25 is silicon limited. 2. e as is tested at starting t j = 25 , l = 0.1 mh, i as = 25 a , v dd = 27v, v gs = 10v . .
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 6 m du5692s - dual n - channel trench mosfet 30v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 2.5v 3.0v 6.0v v gs = 10v 4.5v 4.0v i d , drain current [a] v ds , drain-source voltage [v] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 notes : i d = 20.0a r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 10 20 30 40 50 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 0 2 4 6 8 0 5 10 15 20 25 30 v gs , gate-source voltage [v] notes : v ds = 5v i d , drain current [a]
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 7 m du5692s - dual n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 0 1000 2000 3000 4000 5000 6000 7000 8000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 60 70 0 2 4 6 8 10 v ds = 15v note : i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc] 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 limited by package i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 ms 10 s 10 ms 1 s 100 ms dc operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v]
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 8 m du5692s - dual n - channel trench mosfet 30v package dimension d imensions are in millimeters, unless otherwise specified dual pdfn56 (5x6mm)
aug . 20 15 ver. 1.1 magnachip semiconductor ltd . 9 m du5692s - dual n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider respons ibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademar k of magnachip semiconductor ltd.
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